Sergii Gudyriev

Micro-Transfer Printing has already been proven as successful technology for RnD and Prototyping, allowing integration of different materials and components in a single system, significantly improving the performance, or enabling unique functionality. However, to qualify this technology for industrialization, further aspects of reliability and yield have to be considered. An overview of this technology will be provided with highlights of main reliability considerations and potential solutions.

Sergii Gudyriev holds Master’s degree in Information Technology and Microelectronics and has experience in both electronic and photonic IC design. He has joined X-FAB in 2021 as Photonics Principal Engineer and is now working on the industrialization of the photonic technologies.

Patrick Rostam-Khani

Zero-failure strategies in mission critical applications are pushing reliability towards physics-of-degradation driven reliability testing, beyond the current state-of-the-art test methods. This session presents a highly accelerated vibration test approach linking in‑situ electrical signals directly to solder damage evolution. Physically non-destructive, AI-assisted 3D X-ray microscopy replaces the inaccurate, slow, and more labour-intensive physical cross-sectioning method. This shortens physical analysis cycles and enables remaining useful lifetime prediction under real-world stress loading scenarios.

Dr. Patrick Rostam Khani is currently working as Principal Engineer in the Surface/Material Analysis Group at NXP Semiconductors, based in Nijmegen (The Netherlands). With more than 25 years of experience in Material and Surface Analysis in several roles within the Product Diagnostic and Quality Center Organization of NXP, he works at the intersection of materials characterization, physics of failure, and data driven reliability modeling for advanced electronic packages. Patrick’s work contributes to linking physical degradation mechanisms to measurable signals and simulation models, enabling predictive assessment of reliability under realistic operating conditions. He is actively involved in applying AI assisted approaches to support zero failure strategies into electronics. Patrick received his Ph.D. in Instrumental Analytical Chemistry from the Johann Wolfgang Goethe University of Frankfurt am Main.

Sebastian Brand

For a couple of decades now acoustic microscopy is a relevant and widely used technique in quality assessment, technology development and microelectronic failure analysis. Due to its non-destructive mode of operation, it allows for contactless defect localization, full range quality screening as well as for repetitive screening and thus enables comprehensive investigations of material behaviors under normal operation- and harsh conditions. Those abilities render it particularly relevant in the context of advanced packaging and heterogeneous integration key aspects of next generation microelectronics.

In acoustics the contrast mechanism is based on the excitation and propagation of elastic mechanical waves which interact with interfaces and particles of differing mechanical properties where they get reflected and scattered. Since elastic waves have the ability of penetrating and propagating in opaque materials, imaging and characterization becomes possible without the need of destructive sample preparation to remove intermediate material layers. In microelectronics related applications microscopic imaging resolutions are necessary and thus require the employed acoustic wave fields to be tuned in frequency and appropriately focused into the depth of interest.

The tutorial introduces the basic principles of scanning acoustic microscopy relevant for inspection of microelectronic devices on package-, chip- and waver level. This includes the operational modes C-scan, B-scan, and through-scan in combination with the excitation and propagation phenomena of acoustic waves in solid media as well as the techniques and requirements necessary for appropriate focusing to obtain optimum inspection and analysis resolution for identifying defects such as delaminations, voids, cracks or inclusions. The fundamentals and specific details of the individual approaches will be illuminated along with demonstrations based on selected representative failure analysis cases. In addition, ongoing developments including the application of machine learning approaches employed for signal analysis and interpretation, automation and extended operator support will be presented with respect to the application in metrology and failure analysis.

Attendees will gain practical knowledge for interpreting acoustic signals and images, selecting appropriate parameters for different applications, and understanding the capabilities and limitations of acoustic microscopy inspection. This tutorial is intended for engineers, analysts, and researchers involved in microelectronics failure analysis, reliability engineering, and advanced packaging development.

Sebastian Brand is a senior scientist at the Fraunhofer IMWS, where he leads a research-, development and application team for non-destructive defect localization in the field of failure analysis and metrology. Sebastian holds a Ph.D. in electrical engineering which he received in 2004 from the University of Magdeburg, Germany. In 2004 and 2005 he joined the University of Toronto and Ryerson University in Toronto, Canada as a post-doctoral fellow working in the field of cancer research.
Sebastian has 19 years of experience in the field of acoustics in life- and material sciences and authored /coauthored more than 60 publications in this and adjacent research fields. His current research extends from acoustic methods over Lock-In-Thermography to magnetic imaging where he and his team undertake research and development for non-destructive defect localization and characterization.

Falk Naumann

Application-relevant and accurate material parameters or degradation models are essential for numerical reliability assessments of microelectronic devices. The required properties are often technology- or process-specific and can deviate significantly from literature values or bulk materials. Growing system integration and component miniaturization further complicates robust parameter identification at defined samples. To obtain relevant, locally resolved data on actual components, Fraunhofer IMWS employs various nanoindentation techniques to characterize the mechanical and thermos-mechanical behavior of semiconductor structures and packaging materials. In this talk, application scenarios for local property assessment of semiconductors and packaging materials will be presented. The case study covers required preparation routines, temperature-dependent material testing, and material property mapping of complex structures. Examples include the characterization of different passivation layers, degradation effects, and the measurement of mechanical strength values.

Falk Naumann received the degree in mechanical engineering at the Technical University of Dresden. Since 2006, he has been working at the Fraunhofer Institute for Mechanics of Materials IMWS in Halle. As team manager for micromechanical characterization and numerical modeling, he is involved in research activities related to material characterization and reliability modeling of materials and systems used in microelectronics and power electronic applications.

Mervi Paulasto-Kröckel

Marek Patocka

UWBG AlN and AlGaN are attracting increasing interest for next-generation power electronics, but their development involves major challenges in epitaxy, contacting and device design as material composition and device requirements become more demanding.

In this talk, we discuss key issues in AlGaN and AlN hetero- and homoepitaxy, emphasizing non-destructive characterization by X-ray diffraction together with electron and probe microscopies. We then address the formation of ohmic contacts between silicon-doped AlGaN and metal contact stacks, focusing on how annealing temperature affects the properties of the resulting junction. We will also share the latest TCAD modelling results on high Al content AlGaN/AlN vertical polarization doped field effect transistors (POLFETs) for power electronics applications and outline the key challenges and design approaches for pushing the performance toward material limits.

Mervi Paulasto-Kröckel is Full Professor at Aalto University’s School of Electrical Engineering in Finland. She leads the Electronics Integration and Reliability (EILB) group, focused on exploring innovative materials and design concepts for advanced electronics. Before returning to academia in 2008, she spent over 12 years in automotive semiconductor R&D in Germany. She has authored or co-authored more than 150 scientific papers.

Marek Patočka is a doctoral researcher in EILB group. His research is focused on the characterisation and fabrication of Al(Ga)N layers and devices. He received his MSc degree from Brno University of Technology in 2024.

Heiko Stegmann

The requirements to sample preparation for transmission electron microscopy (TEM) using combined scanning electron microscope – focused ion beam instruments (FIB-SEM) in semiconductor manufacturing support, process development and failure analysis are becoming increasingly stringent. Lamellas need to be thinner, larger, of better quality, and be produced at higher throughput. To name just a few drivers: For logic nodes, routine preparation of lamellas with a thickness of ≤ 20 nm at an endpoint accuracy of 2 nm has become essential. DRAM lamella requirements are approaching ≤ 10 nm thickness over 0.5 to 1.0 µm2 areas. 3D NAND will require lamellas that are several tens of micrometers tall.
To address these requirements, ZEISS has introduced Crossbeam 750, a FIB-SEM highly optimized for the most demanding lamella preparation tasks. We will present physical limits and practical problems in FIB lamella prep, their consequential requirements to instrumentation, solution approaches and their shortcomings. Furthermore, we will introduce the new features of Crossbeam 750 that allow high resolution continuous SEM control of lamella thinning and endpointing even at lowest FIB energies.

Physics studies and doctorate on biophysical TEM applications at the University of Heidelberg. Post-doc in 3D TEM of motor proteins at the Max Planck Institute for Medical Research. Senior Materials Analyst at AMD Saxony, working on physical failure analysis and process development support, as well as TEM characterization method development. Since 2004, application expert and advisor at Carl Zeiss Microscopy GmbH with emphasis on characterization of nanostructures for failure analysis and manufacturing process development, using techniques such as SEM, FIB, STEM, EDX, FIB-SIMS, and working on their continuous improvement.

Michael Fritzsche

Failure analysis in semiconductor manufacturing requires fast and reliable access to many different data sources. As IT environments continue shifting toward cloud‑based solutions, traditional, separate workflows make it difficult to keep analysis efficient and consistent.
In this talk, I will show how combining bitmap data, inline‑defect inspection results, scan‑diagnosis output, FA results , and electrical sort information into one integrated digital workflow, which improves the turnaround time and quality of failure analysis. Automated data alignment and correlation help engineers identify patterns and potential root causes much earlier in the process.
The unified workflow has been demonstrated to reduce manual effort, enhance transparency, and ensure that all relevant information is available when required for failure analysis. This results in faster diagnostics, improved support for engineering teams, and greater customer satisfaction, because decisions can be made based on complete, up‑to‑date data.

Michael Fritzsche is a Central Labs Staff Technician with over 20 years of broad failure analysis experience.
Since 2004, he has worked as a Physical Failure Analysis Technician, initially focusing on bitmap, logic, and nanoprobing on various analytical tools. Today, he supports diverse operational areas including bitmap, scan diagnosis, Avalon configurations, and managing the Failure Analysis request system, giving him strong insight into product lifecycles and FA workflows. He also enhanced the lab’s IT infrastructure by developing web‑based visualization tools and automated processes that improve transparency, data access, and efficiency for engineering teams.

Christopher Benndorf

Hybrid bonding is a key technology for next-generation 3D integration in microelectronics, enabling extremely high contact and packing densities with millions of interconnects per mm², as well as improved signal integrity and energy efficiency. However, the combination of direct bonding of dielectrics and thermocompression bonding of copper pads results in complex failure modes with both chemical and mechanical-physical origins. To analyze these challenges, Fraunhofer IMWS applies a combination of high-resolution (S)TEM and highly sensitive ToF-SIMS for failure analysis of hybrid wafer bonding systems. ToF-SIMS enables depth-resolved and lateral chemical characterization of the bonding interface, detecting even trace amounts of oxides, nitrides, and contamination. (S)TEM complements this with nanoscale insight into structural integrity, revealing voids, cracks, interfacial roughness, and Cu-Cu contact quality. Correlating both methods links chemical and structural information directly to electrical failures, supporting root-cause analysis and process optimization for reliable 3D integrated systems.

Studied chemistry, followed by a PhD in inorganic solid-state chemistry and physical chemistry at Westfälische Wilhelms-Universität Münster, with a focus on solid-state NMR spectroscopy of intermetallic phases and polypnictides.
Research associate and junior research group leader at University of Leipzig (2017–2024).
Since 2024, researcher at the Fraunhofer Institute for Microstructure of Materials and Systems IMWS in Halle (Saale), focusing on ToF-SIMS and TEM as tools for failure analysis in microelectronics and wafer bonding.

Lorenz Heinemann 

Scanning Acoustic Microscopy (SAM) is widely used in semiconductor failure analysis, but interpreting its data remains challenging. In practice, measurement noise, caused by complex packaging structures and material variations, can make very similar signals appear different, highlighting the instability of the interpretation process. This talk uses noise in SAM data as an example to illustrate how an AI-driven workflow can improve analysis. It demonstrates how structured data, automated evaluation, and a cloud-based platform can streamline handling, processing, and comparing datasets, enabling faster, more consistent, and reproducible failure analysis in practical workflows.

Lorenz Heinemann is a PhD candidate and researcher at the Fraunhofer IMWS in the Department of Non-Destructive Defect Localization. He earned his master’s degree in Computer Science from Leipzig University in 2023. His research centers on acoustic microscopy, with a focus on developing innovative AI-based analysis methods and intuitive software solutions. Through his work, he aims to enhance the accessibility and effectiveness of acoustic microscopy, particularly from a software perspective.

Martin Calkovsky

Threading dislocations (TDs) are critical crystalline defects in GaN-based materials, significantly impacting the performance, reliability, and lifetime of electronic and optoelectronic devices. We present Revelios, a semi-automated, non-destructive crystalline defect metrology software prototype based on electron channeling contrast imaging (ECCI). Revelios SW prototype enables large-area acquisition, automated stitching, detection and classification of TDs into a-, c-, and a+c-types. Dislocation type is determined by combining data acquired at different diffraction conditions and analyzing the black-white contrast orientation with respect to the set diffraction vector. Validation against expert manual evaluation shows a detection accuracy of 94% and a classification accuracy of 79%. These results demonstrate that Revelios SW prototype provides a robust and scalable solution for high-throughput GaN defect metrology and could be suitable for epitaxial process optimization and manufacturing control. Automation significantly increases throughput and reliability, supports efficient quantitative TD analysis, and makes the methodology accessible to less experienced users.

Dr. Martin Calkovsky is an electron microscopy expert specializing in crystalline defect metrology. With over 9 years of experience, Dr. Calkovsky currently holds the position of Application Scientist at Thermo Fisher Scientific Brno, focusing on developing advanced metrology methods using scanning electron microscopy (SEM) techniques. Holding a Ph.D. from Karlsruhe Institute of Technology, he has a proven track record in methodology development for material contrast quantification. Dr. Calkovsky has also held positions at the Institute for Basic Science South Korea and Karlsruhe Institute of Technology and is proficient in FIB/SEM and TEM microscopy for materials analysis.