21. May 2025
09:40 – 10:20
GaN electronics
Gallium Nitride Power Devices and Systems: Benefits and Industrial Realization
Thomas Detzel
Infineon Technologies Austria AG I Austria
Abstract
Power Semiconductors based on Gallium-Nitride (GaN) will provide a major contribution to energy and material efficiency in power electronics. At the moment we are privileged to witness the implementation of GaN as game changing semiconductor material for power devices and systems. This keynote will show the most promising Gallium-Nitride based device concepts and major innovations enabling the wide adoption of GaN in a broad range of applications. Important aspects relevant for the industrialization of GaN power devices will be explained. Finally, it will be shown that an outstanding R&D and manufacturing ecosystem is a key success factor in this exciting innovation journey.
Biography
Thomas Detzel received the M.S. degree in physics from the University of Constance, Germany, in 1991 and the Ph.D. degree in surface and thin-film physics in 1994 from the Max-Planck-Institute Garching, Germany. After a four years engagement in the semiconductor supplier industry he joined Infineon Technologies in Villach in 1999, where he was responsible for the metallization development of automotive power semiconductors and has been the Project Manager of different power integrated circuit developments from 2004-2011. Since 2011 he has been building up and managing the technology development organization for GaN power devices at Infineon Villach, with world-wide responsibility since 2020.