Marc Heinemann

Electrical probing of transistors at advanced technology nodes requires precise alignment of the probe and the sample. This is typically performed within a scanning electron microscope (SEM) to visualize the probe and sample. Alignment is generally based on visual feedback from SEM images, a process that is time-consuming. Moreover, continuous exposure to the electron beam can result in carbon deposition and sample charging. Carbon deposition can pose significant challenges by increasing the contact resistance between the sample and the probe. Additionally, sample charging may alter its physical properties or even cause permanent damage. Consequently, it is crucial to minimize charging as much as possible when measuring the intrinsic electrical properties of the sample. This presentation will demonstrate methods for reducing the electron dose to an absolute minimum during nanoprobing.

Dr. Marc Heinemann earned his PhD at Helmholtz Zentrum Berlin, focusing on semiconductor failure analysis. At the National Renewable Energy Laboratory, he specialized in oxide layer fabrication and at the National University of Singapore, he developed organic semiconductor devices. For the past seven years, Dr. Doe has been with SmarAct, creating advanced nanoprobing solutions for semiconductor fault analysis.