Victor Sizov

III-nitrides has been gaining increased attention in the power electronics industry due to its advantageous chemical, mechanical and electrical properties marking an obvious successor in many power management applications. Based on wide band gap material, GaN high electron mobility transistor (HEMT) offers high electrical breakdown as well as low on-resistance thanks to naturally occurring two-dimensional electron gas. Two GaN HEMT topologies, namely, depletion mode (D-mode) and enhancement mode (E-mode) already gained commercial footprint in power electronics and are expected to show the highest CAGR in the industry.
E-mode topology prevails today mainly due to its simplicity on the application level. However, we argue that D-mode devices will retain several advantages, particularly in the higher power segments, which will ultimately keep both e-mode and d-mode devices relevant pending application segments.
A comparison of E-mode and D-mode devices is presented in this paper. Device technology, application and reliability aspects are covered highlighting proc and cons in regards of target application segment. Based on those aspects, high-power and high-performance applications.

Victor Sizov received the M.S. degree in physics from the Master of Science in Physics, graduated from Saint-Petersburg State Technical University, Russia, in 2006 and the Ph.D. degree in semiconductor physics in 2010 from the from A.F. Ioffe Physical-Technical Institute, Russia. After several years of taking role of material scientist/characterization engineer at GaN on Si pioneer in EPI technology Azzurro-Semiconductor Victor has joined XFAB in 2015, where he has been building up and managing GaN-on-Si technology platform development for power and other applications. In 2024 Victor has joined Nexperia as Director GaN Process Development strengthening GaN R&D leadership team.