Najasek
21. May 2025 11:20 – 11:40 GaN Electronics Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates Michél Simon-Najasek Fraunhofer IMWS I Germany Abstract The clear correlation of defect localization by Electroluminescence to nanometer sized defects at Schottky gate contacts of GaN HEMTs are always challenging…