Keynotes

EU Chips Act - An Introduction

SiC power devices and related robustness and reliability aspects

Applied Microstructure for AI: From Electrons to Devices & From Diagnostics to Informatics

Characterisation needs in wafer-to-wafer and die-to-wafer direct bonding

Anton Chichkov

Chips Joint Undertaking I Belgium

The EU Chips Act represents a critical strategy for enhancing the European Union’s semiconductor capabilities, ensuring technological sovereignty, and fostering innovation…

Peter Friedrichs

Infineon Technologies AG I Germany

The implementation of wide band gap based power semiconductor solutions, was growing substantially during the last years, Driving forces behind this market development are global megatrends like energy saving, de-carbonization and effective use of scarce resources…

Prof. Dr. Zhiheng Huang

Sun Yat-sen University I China

Although not even mentioned in the original launch of the US materials genome initiative (MGI) in 2011, AI has now been identified the true enabler and driving force of MGI. Latest progress reports Google DeepMind and robots joined forces to discover and synthesis new materials…

Frank Fournel

CEA-Leti I France

Direct bonding is now a well-established technique that enables various 3D applications. Mass production of silicon dioxide to silicon dioxide bonding, as well as hybrid surfaces with copper pads, is in mass production within microelectronic foundries…

SiC power devices and related robustness and reliability aspects

Peter Friedrichs

Infineon Technologies AG I Germany

Abstract

The implementation of wide band gap based power semiconductor solutions, was growing substantially during the last years, Driving forces behind this market development are global megatrends like energy saving, de-carbonization and effective use of scarce resources. One of the success factors of implementing SiC as a power device material is the chance to adopt many of the well-known device concepts and processing technologies from silicon.

Thus, many of the procedures used to verify the long-term stability of silicon devices could be transferred to SiC. Nevertheless, a deeper analysis has shown that SiC based devices require some additional and different reliability tests compared to Si based devices. Aspects like anisotropic material properties, higher electric fields or faster transients may have an influence on nearly all established qualification tests.

Furthermore, for many existing qualification standards that specify accelerated tests, models are used to extrapolate the test data and correlate it to real world application conditions. These model parameters need to be verified for their application and accuracy with respect to SiC. The keynote presentation will give a more detailed inside into the current status of SiC related reliability assurance
procedures, also addressing ruggedness aspects.

Biography

Dr. Peter Friedrichs received his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993 and finished his Ph.D thesis at the Fraunhofer Institute FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC. In 1996 he joined the Siemens AG and was involved in the development of power devices on SiC. Peter joined SiCED GmbH & Co. KG, a company being a joint venture of Siemens and Infineon, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED. In 2009 he achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED’s activities into Infineon he joined Infineon Technologies AG on April 1st, 2011 and acts currently as Fellow SiC Innovation.

Applied Microstructure for AI: From Electrons to Devices & From Diagnostics to Informatics

Prof. Dr. Zhiheng Huang

Sun Yat-sen University I China

Abstract

Although not even mentioned in the original launch of the US materials genome initiative (MGI) in 2011, AI has now been identified the true enabler and driving force of MGI.Latest progress reports Google DeepMind and robots joined forces to discover and synthesis new materials. Microstructure of materials should be treated as a system as perceived by the pioneering work of C.S. Smith. Highlighting the achievements of MGI in the past decade, it is the atomic scale details represented by DFT-based calculations and graph neural network that have attracted most of the interests. Phase spaces that reflect elemental combinations to yield desirable chemistry or physics have been explored, but the results that AI recommends still deserve better interpretations. Based on a convergence amongst deep neural networks, wavelets, and physiology of human brain, and the theory of Mallat Scattering Transform, this talk introduces the principles behind the recent proposed Microstructure Hierarchy Descriptor (μSHD). The μSHDs are designable and reduced order indices that can be used to establish quantitative linkages between structures, properties, and failure analyses. Applied microstructure diagnostics spanning structures from electron to device levels, and failure analyses on 3D and power electronics will be discussed with a vision from μSHD data to microstructure informatics and AI.

Biography

Zhiheng Huang received the B.Eng. & M.Eng. degrees from Harbin Institute of Technology (China), and the Ph.D. degree from Loughborough University (UK). He did postdoctoral research at Loughborough Uni. and Max Planck Institute for Iron Research (MPIE, Germany). In June 2008, he returned to China and joined Sun Yat-sen University, where he is currently an Associate Professor in the School of Materials Science & Engineering. He had successfully completed the project on Integrated Computational Materials Engineering for 3D Electronic Packaging funded by the Guangzhou Pear River Sci. & Tech. Nova program, along with his NSFC funded early career project. In a recent NSFC funded key project on oxidation and corrosion of SiC-based ceramics at high temperatures, he proposed the MicroStructure hierarchy Descriptor (μSHD) and utilized it as a tool to quantify the microstructure of sintered SiC ceramics and establish the linkages between μSHDs and material properties. Recent years have seen his active participation in the field of Materials Genome Engineering and practice of μSHDs for metals, polymers, physical and failure analysis, and food science.

Characterisation needs in wafer-to-wafer and die-to-wafer direct bonding

Frank Fournel

CEA-Leti I France

Abstract

Direct bonding is now a well-established technique that enables various 3D applications. Mass production of silicon dioxide to silicon dioxide bonding, as well as hybrid surfaces with copper pads, is in mass production within microelectronic foundries. However, hydrophilic direct bonding remains a challenging technology due to its very low adhesion energy, necessitating stringent control over surface properties such as flatness, roughness, and particle contamination. Before bonding, precise control of these surface parameters is mandatory.

Furthermore, post-bonding, it is imperative to monitor defectivity with a buried interface between 775µm of silicon. Bonding energy is also a crucial consideration, for which only destructive technology is currently available. Additionally, for in-depth analysis of the bonding interface, techniques such as X-ray, FTIR, or even neutron reflectivity are required.

While there are numerous failure analysis and surface material diagnostic methods at the wafer scale, the complexity significantly increases at the die scale, revealing vast challenges. As die-to-wafer bonding is on the verge of entering mass production, it is high time to extend the same characterization capabilities to this scale.

Biography

Frank Fournel is 48 years old. He graduated from the “Ecole Supérieure de Physique et de Chimie Industrielle de la ville de Paris” (ESPCI) with a master in “Materials science” (thin layer option). He got his PhD in 2001 for his work in CEA Grenoble on the use of molecular bonding to elaborate twisted substrate in order to drive a self-positioning nanostructure growth. Just after this, he has been employed by CEA in the thin film and circuit layers transfer laboratory.

His main focus is on the fundamental understanding of the direct bonding and its application in thin layer transfer technique and substrate engineering. Beside this, he has been involved or driven many international project with CEA industrial partners (STmicroelectronic, Alcatel, SOITEC, Aledia, Intel,…) which gave him the advantage to drive simultaneously academic research and applicative one. He is now the head of the bonding technology engineering in LETI. He is now also involved in metallic bonding (direct, eutectic or thermo-compression), in anodic bonding and in polymer bonding (permanent or temporary) and covalent bonding (SAB). His focus concerns now also all the 3D applications including temporary bonding for instance for Si interposer or including Cu/Cu hybrid bonding for high pitch interconnexions.

In addition to all the wafer to wafer bonding approaches, he also study deeply the die to wafer bonding when direct bonding is used for photonic application or 3D one. He was involved in the SOI conference board for 3 years and he is now a board member of the international ECS Wafer Bonding Symposium conference as well as the International Wafer’Bond conference and LTB-3D. He has 185 international publications, 120 deposited patents and is a CEA fellow.

EU Chips Act - An Introduction

Anton Chichkov

Chips Joint Undertaking I Belgium

Abstract

The EU Chips Act represents a critical strategy for enhancing the European Union’s semiconductor capabilities, ensuring technological sovereignty, and fostering innovation. This talk will provide a comprehensive overview of the Chips Joint Undertaking (Chips JU), elucidating its structure, budget, and governance framework. Attendees will gain insights into the specific calls launched under the Chips initiative as well as traditional, non-initiative calls, highlighting their distinct objectives and opportunities. Finally, the session will outline the call schedule and key topics for 2024, preparing stakeholders to effectively engage with forthcoming opportunities.