21. May 2025 11:20 – 11:40 GaN Electronics Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates Michél Simon-Najasek Fraunhofer IMWS I Germany Abstract The clear correlation of defect localization by Electroluminescence to nanometer sized defects at Schottky gate contacts of GaN HEMTs are always challenging…
21. May 2025 10:40 – 11:00 GaN Electronics A direct correlation of dislocation characterization in GaN by scanning electron and scanning transmission electron microscopes Aidan Taylor Infineon Villach I Austria Abstract Understanding the distribution of crystal defects is an important topic for semiconductor materials. This is particularly challenging for gallium nitride on silicon (GaN-on-Si) as…
21. May 2025 09:40 – 10:20 GaN electronics Gallium Nitride Power Devices and Systems: Benefits and Industrial Realization Thomas Detzel Infineon Technologies Austria AG I Austria Abstract Power Semiconductors based on Gallium-Nitride (GaN) will provide a major contribution to energy and material efficiency in power electronics. At the moment we are privileged to witness the…