21. May 2025 11:00 – 11:20 GaN Electronics Defect characterization in compound semiconductors using cathodoluminescence Marc Fouchier Attolight I Switzerland Abstract Cathodoluminescence (CL) consists in the analysis of the light emitted in the UV-IR range by a material upon its excitation with an electron beam. This technique is particularly useful in compound semiconductors, such as…
21. May 2025 12:00 – 12:20 GaN Electronics Towards affordable GaN power modules – advanced interconnect materials & solutions Sebastian Fritzsche Heraeus Electronics GmbH & Co. KG I Germany Abstract The manufacturing of affordable GaN power modules continues to present unique challenges and opportunities for advanced packaging technologies. Heraeus Electronics is working on innovative interconnect…
21. May 2025 11:40 – 12:00 GaN Electronics Reliability characterization challenges for wide bandgap power electronics Daniel Wetzel X-Fab I Germany Abstract In today’s rapidly evolving semiconductor landscape, the adoption of wide-bandgap materials, advanced silicon (Si), and Micro-Electro-Mechanical Systems (MEMS) technologies is expanding the range of high-power applications. Wide-bandgap semiconductors such as Gallium Nitride (GaN)…
21. May 2025 16:20 – 16:40 AI Applications and FA Workflows Failure Analysis Ontology for structuring FA knowledge and meta data in a machine and human readable format Christoph Maier Infineon Technologies AG I Germany Abstract Failure Analysis (FA) is critical for fast time-to-market and semiconductor reliability, yet structuring FA knowledge to align with FAIR…
21. May 2025 11:20 – 11:40 GaN Electronics Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates Michél Simon-Najasek Fraunhofer IMWS I Germany Abstract The clear correlation of defect localization by Electroluminescence to nanometer sized defects at Schottky gate contacts of GaN HEMTs are always challenging…
21. May 2025 10:40 – 11:00 GaN Electronics A direct correlation of dislocation characterization in GaN by scanning electron and scanning transmission electron microscopes Aidan Taylor Infineon Villach I Austria Abstract Understanding the distribution of crystal defects is an important topic for semiconductor materials. This is particularly challenging for gallium nitride on silicon (GaN-on-Si) as…
21. May 2025 09:40 – 10:20 GaN electronics Gallium Nitride Power Devices and Systems: Benefits and Industrial Realization Thomas Detzel Infineon Technologies Austria AG I Austria Abstract Power Semiconductors based on Gallium-Nitride (GaN) will provide a major contribution to energy and material efficiency in power electronics. At the moment we are privileged to witness the…