21. May 2025
12:00 – 12:20
GaN Electronics
Towards affordable GaN power modules – advanced interconnect materials & solutions
Sebastian Fritzsche
Heraeus Electronics GmbH & Co. KG I Germany
Abstract
The manufacturing of affordable GaN power modules continues to present unique challenges and opportunities for advanced packaging technologies. Heraeus Electronics is working on innovative interconnect materials and solutions such as bonding wires with customized Die Top Systems, Ag sintering pastes, and metal ceramic substrates specifically designed to optimize the performance of low-cost GaN power modules.
The talk will highlight challenges, recent innovations, and promising results, such as higher shear forces and improved robustness of pressure sintering pastes. Preliminary test results with finer Cu wires and prototypes of successfully produced small Die Top Systems will also be presented. Heraeus Electronics collaborated with several partners in the ongoing EU and German public project “ALL2GaN,” to meet the requirements for miniaturization and high power density with GaN chips, thus ensuring optimal performance and reliability.
Biography

Dr. Sebastian Fritzsche earned his Ph.D. in Inorganic Chemistry in 2004 from the University of Leipzig. From 2004 to 2009, he was responsible for the development of electric and electronic materials at Umicore, Hanau. Between 2009 and 2022, he led various innovation teams at Heraeus, Hanau focusing on the development of electronic materials such as solder alloys, powders and pastes, Ag sinter materials, and adhesives. Since April 2022, he has been heading a team at Heraeus Electronics, responsible for new materials and technology scouting, and managing public funded projects.