20. May 2026
12:00 – 12:20
Advanced Failure Analyse Techniques
Automated Ion Beam SIMS Inspection and Failure Analysis: Overcoming EDS Resolution and Sensitivity Limits
Peter Gnauck
Raith GmbH I Germany
Abstract
Advanced semiconductor devices require nanoscale chemical analysis beyond the limits of EDS. IONMASTER’s magnetic sector SIMS delivers hyperspectral imaging with <20 nm resolution and high ion transmission efficiency, enabling precise detection of trace elements and isotopes in complex 3D structures. Automated ROI localization using GDS – and KLARF based navigation ensures accurate targeting of buried and low contrast features while reducing operator dependency. High sensitivity depth profiling achieves nanometer level repeatability, supporting reliable process control. Application examples include isotopic mapping within CMOS stacks, identification of Na residues in vias invisible to SE imaging, and 3D reconstruction of subsurface contamination. Automated SIMS inspection thus provides the resolution, sensitivity, and workflow efficiency required for modern failure analysis and semiconductor metrology.
Biography

Dr. Peter Gnauck earned his Ph.D. in physics from the University of Tübingen in 2000. He worked at Carl Zeiss Microscopy for over two decades in various roles, specializing in electron microscopy and focused ion beam (FIB) technology. He then joined KLA as a Product Marketing Manager for e-Beam overlay. Since 2024, he has been serving as Global Business Development Manager for FIB/SEM systems at Raith GmbH.