Heiko Stegmann

The requirements to sample preparation for transmission electron microscopy (TEM) using combined scanning electron microscope – focused ion beam instruments (FIB-SEM) in semiconductor manufacturing support, process development and failure analysis are becoming increasingly stringent. Lamellas need to be thinner, larger, of better quality, and be produced at higher throughput. To name just a few drivers: For logic nodes, routine preparation of lamellas with a thickness of ≤ 20 nm at an endpoint accuracy of 2 nm has become essential. DRAM lamella requirements are approaching ≤ 10 nm thickness over 0.5 to 1.0 µm2 areas. 3D NAND will require lamellas that are several tens of micrometers tall.
To address these requirements, ZEISS has introduced Crossbeam 750, a FIB-SEM highly optimized for the most demanding lamella preparation tasks. We will present physical limits and practical problems in FIB lamella prep, their consequential requirements to instrumentation, solution approaches and their shortcomings. Furthermore, we will introduce the new features of Crossbeam 750 that allow high resolution continuous SEM control of lamella thinning and endpointing even at lowest FIB energies.

Physics studies and doctorate on biophysical TEM applications at the University of Heidelberg. Post-doc in 3D TEM of motor proteins at the Max Planck Institute for Medical Research. Senior Materials Analyst at AMD Saxony, working on physical failure analysis and process development support, as well as TEM characterization method development. Since 2004, application expert and advisor at Carl Zeiss Microscopy GmbH with emphasis on characterization of nanostructures for failure analysis and manufacturing process development, using techniques such as SEM, FIB, STEM, EDX, FIB-SIMS, and working on their continuous improvement.