19. May 2026 11:00 – 11:20 3D Heterogeneous Integration Defect characterization of hybrid bonded systems Christopher Benndorf Fraunhofer IMWS I Germany Abstract Hybrid bonding is a key technology for next-generation 3D integration in microelectronics, enabling extremely high contact and packing densities with millions of interconnects per mm², as well as improved signal integrity and energy…
20. May 2026 14:00 – 14:20 Artificial Intelligence and Digitalization Noise in SAM Data: When Similar Signals Lead to Different Diagnoses Lorenz Heinemann Fraunhofer IMWS I Germany Abstract Scanning Acoustic Microscopy (SAM) is widely used in semiconductor failure analysis, but interpreting its data remains challenging. In practice, measurement noise, caused by complex packaging structures and…
19. May 2026 17:00 – 17:20 Wide Bandgap Technolgies Revelios: Semi-automated, non-destructive crystalline defect metrology for GaN based epitaxial layers Martin Calkovsky Thermo Fisher Scientific Brno I Czech Republic Abstract Threading dislocations (TDs) are critical crystalline defects in GaN-based materials, significantly impacting the performance, reliability, and lifetime of electronic and optoelectronic devices. We present Revelios,…
20. May 2026 12:00 – 12:20 Advanced Failure Analyse Techniques Automated Ion Beam SIMS Inspection and Failure Analysis: Overcoming EDS Resolution and Sensitivity Limits Peter Gnauck Raith GmbH I Germany Abstract Advanced semiconductor devices require nanoscale chemical analysis beyond the limits of EDS. IONMASTER’s magnetic sector SIMS delivers hyperspectral imaging with <20 nm resolution and…
20. May 2026 10:00 – 10:20 Advanced Failure Analyse Techniques Capabilities of a 3D Magnetic Inverse for Localizing Faults Frederick Wellstood Neocera MAGMA LLC I US Abstract We describe a magnetic inverse that can extract a 3D current path from a magnetic field image of the path. To evaluate performance, we processed hundreds of simulated…
19. May 2026 14:20 – 14:40 3D Heterogeneous Integration Tescan FemtoChisel: High-Throughput Decapsulation, Delayering, and Large-Area Cross-Sectioning for Advanced Microelectronics Pouya Tavousi Tescan I US Abstract Advanced microelectronics failure analysis and metrology require rapid access through heterogeneous stacks (mold compound, underfill, metals, dielectrics, silicon). Tescan FemtoChisel is an ultrashort-pulsed laser platform for high-throughput sample preparation,…
20. May 2026 10:20 – 10:40 Advanced Failure Analyse Techniques Quantum Magnetic Microscopy for Semiconductor Failure Analysis Marvin Holten DiaSense ApS I Denmark Abstract The transition to advanced 3D integrated circuits and system-in-package designs is creating major challenges for fault detection, yield optimisation, and process understanding. Existing inspection and failure-analysis methods often cannot provide the…
20. May 2026 15:20 – 15:40 Artificial Intelligence and Digitalization Federated Learning for Semiconductor Failure Analysis Leo Svenningsson RISE I Sweden Abstract Semiconductor failure analysis increasingly benefits from machine learning, but individual organizations often lack enough data to build robust and accurate models. At the same time, building databases across companies is typically restricted due…
19. May 2026 14:00 – 14:20 3D Heterogeneous Integration Microwave Induced Plasma Etching for 2.5D/3D Advanced Package Sample Preparation Jiaqi Tang JIACO Instruments I The Netherlands Abstract Advanced packages, such as 2.5D and 3D architectures, enable significant improvements in performance and bandwidth, while reducing overall footprint. However, as package complexity increases with multiple dies and…
20. May 2026 15:00 – 15:20 Artificial Intelligence and Digitalization Accelerating and standardization of failure analysis through digital workflows and machine learning Amit Choudhary Matworks GmbH I Germany Abstract Failure analysis (FA) in microelectronics is increasingly challenging due to miniaturization and the need for precise defect localization. Traditional methods rely on manual, time-intensive inspection. We…