Gudyriev

19. May 2026 11:20 – 11:40 3D Heterogeneous Integration Reliability considerations for Micro-Transfer Printing of Photonic Components Sergii Gudyriev X-FAB I Germany Abstract Micro-Transfer Printing has already been proven as successful technology for RnD and Prototyping, allowing integration of different materials and components in a single system, significantly improving the performance, or enabling unique functionality.…

Rostam-Khani

20. May 2026 13:40 – 14:00 Artificial Intelligence and Digitalization Bringing Physics of Degradation Methodology in Board Level Vibration Testing Patrick Rostam-Khani NXP Semiconductors I The Netherlands Abstract Zero-failure strategies in mission critical applications are pushing reliability towards physics-of-degradation driven reliability testing, beyond the current state-of-the-art test methods. This session presents a highly accelerated vibration…

Brand

20. May 2026 08:00 – 09:00 Tutorial Defect localization by Acoustic Microscopy Sebastian Brand Fraunhofer IMWS I Germany Abstract For a couple of decades now acoustic microscopy is a relevant and widely used technique in quality assessment, technology development and microelectronic failure analysis. Due to its non-destructive mode of operation, it allows for contactless defect…

Naumann

19. May 2026 14:40 – 15:00 3D Heterogeneous Integration Local material characterization for heterogeneous system integration using nanoindentation techniques Falk Naumann Fraunhofer IMWS I Germany Abstract Application-relevant and accurate material parameters or degradation models are essential for numerical reliability assessments of microelectronic devices. The required properties are often technology- or process-specific and can deviate significantly…

Paulasto

19. May 2026 16:40 – 17:00 Wide Bandgap Technolgies Materials and Device Challenges of UWBG AlN/AlGaN for Power Electronics Mervi Paulasto-Kröckel Marek Patocka Aalto University I Finland Abstract UWBG AlN and AlGaN are attracting increasing interest for next-generation power electronics, but their development involves major challenges in epitaxy, contacting and device design as material composition…

Stegmann

20. May 2026 11:20 – 11:40 Advanced Failure Analyse Techniques See while you mill – SEM guided FIB milling and low-kV finishing for leading-edge node semiconductor FA with ZEISS Crossbeam 750 Heiko Stegmann Carl Zeiss Microscopy GmbH I Germany Abstract The requirements to sample preparation for transmission electron microscopy (TEM) using combined scanning electron microscope…

Fritzsche

20. May 2026 14:40 – 15:00 Artificial Intelligence and Digitalization Integrated Digital Workflows for Accelerated Failure Analysis and Enhanced Yield Learning in Semiconductor Manufacturing Michael Fritzsche GlobalFoundries Fab1 I Germany Abstract Failure analysis in semiconductor manufacturing requires fast and reliable access to many different data sources. As IT environments continue shifting toward cloud‑based solutions, traditional,…

Benndorf

19. May 2026 11:00 – 11:20 3D Heterogeneous Integration Defect characterization of hybrid bonded systems Christopher Benndorf Fraunhofer IMWS I Germany Abstract Hybrid bonding is a key technology for next-generation 3D integration in microelectronics, enabling extremely high contact and packing densities with millions of interconnects per mm², as well as improved signal integrity and energy…

Heinemann

20. May 2026 14:00 – 14:20 Artificial Intelligence and Digitalization Noise in SAM Data: When Similar Signals Lead to Different Diagnoses Lorenz Heinemann  Fraunhofer IMWS I Germany Abstract Scanning Acoustic Microscopy (SAM) is widely used in semiconductor failure analysis, but interpreting its data remains challenging. In practice, measurement noise, caused by complex packaging structures and…

Calkovsky

19. May 2026 17:00 – 17:20 Wide Bandgap Technolgies Revelios: Semi-automated, non-destructive crystalline defect metrology for GaN based epitaxial layers Martin Calkovsky Thermo Fisher Scientific Brno I Czech Republic Abstract Threading dislocations (TDs) are critical crystalline defects in GaN-based materials, significantly impacting the performance, reliability, and lifetime of electronic and optoelectronic devices. We present Revelios,…