21. May 2025 11:40 – 12:00 GaN Electronics Reliability characterization challenges for wide bandgap power electronics Daniel Wetzel X-Fab I Germany Abstract In today’s rapidly evolving semiconductor landscape, the adoption of wide-bandgap materials, advanced silicon (Si), and Micro-Electro-Mechanical Systems (MEMS) technologies is expanding the range of high-power applications. Wide-bandgap semiconductors such as Gallium Nitride (GaN)…
21. May 2025 14:40 – 15:00 AI Applications and FA Workflows Leveraging Machine Signals for Device-Level Quality Detection and Automatic Root Cause Analysis in Semiconductor Wire Bonding Kenneth J. Braakman NXP Semiconductors I The Netherlands Abstract This presentation focuses on leveraging machine signal data from wire bond machines by building data-driven solutions to enhance root…
21. May 2025 16:20 – 16:40 AI Applications and FA Workflows Failure Analysis Ontology for structuring FA knowledge and meta data in a machine and human readable format Christoph Maier Infineon Technologies AG I Germany Abstract Failure Analysis (FA) is critical for fast time-to-market and semiconductor reliability, yet structuring FA knowledge to align with FAIR…
21. May 2025 10:20 – 10:40 GaN Electronics Cascode GaN devices for high power application Victor Sizov Nexperia I Germany Abstract III-nitrides has been gaining increased attention in the power electronics industry due to its advantageous chemical, mechanical and electrical properties marking an obvious successor in many power management applications. Based on wide band gap…