19. May 2026 16:40 – 17:00 Wide Bandgap Technolgies Materials and Device Challenges of UWBG AlN/AlGaN for Power Electronics Mervi Paulasto-Kröckel Marek Patocka Aalto University I Finland Abstract UWBG AlN and AlGaN are attracting increasing interest for next-generation power electronics, but their development involves major challenges in epitaxy, contacting and device design as material composition…
19. May 2026 17:00 – 17:20 Wide Bandgap Technolgies Revelios: Semi-automated, non-destructive crystalline defect metrology for GaN based epitaxial layers Martin Calkovsky Thermo Fisher Scientific Brno I Czech Republic Abstract Threading dislocations (TDs) are critical crystalline defects in GaN-based materials, significantly impacting the performance, reliability, and lifetime of electronic and optoelectronic devices. We present Revelios,…
19. May 2026 16:20 – 16:40 Wide Bandgap Technolgies Diamond-based technologies for active device and thermal cooling integration Matthias Muehle Fraunhofer CMW I US Abstract Diamond is an ultra-wide bandgap semiconductor material, whose electric properties make it a great choice as p-type material for device integration. Further, diamond possesses the highest thermal conductivity, which also…