20. May 2026 11:20 – 11:40 Advanced Failure Analyse Techniques See while you mill – SEM guided FIB milling and low-kV finishing for leading-edge node semiconductor FA with ZEISS Crossbeam 750 Heiko Stegmann Carl Zeiss Microscopy GmbH I Germany Abstract The requirements to sample preparation for transmission electron microscopy (TEM) using combined scanning electron microscope…
20. May 2026 12:00 – 12:20 Advanced Failure Analyse Techniques Automated Ion Beam SIMS Inspection and Failure Analysis: Overcoming EDS Resolution and Sensitivity Limits Peter Gnauck Raith GmbH I Germany Abstract Advanced semiconductor devices require nanoscale chemical analysis beyond the limits of EDS. IONMASTER’s magnetic sector SIMS delivers hyperspectral imaging with <20 nm resolution and…
20. May 2026 10:00 – 10:20 Advanced Failure Analyse Techniques Capabilities of a 3D Magnetic Inverse for Localizing Faults Frederick Wellstood Neocera MAGMA LLC I US Abstract We describe a magnetic inverse that can extract a 3D current path from a magnetic field image of the path. To evaluate performance, we processed hundreds of simulated…
20. May 2026 10:20 – 10:40 Advanced Failure Analyse Techniques Quantum Magnetic Microscopy for Semiconductor Failure Analysis Marvin Holten DiaSense ApS I Denmark Abstract The transition to advanced 3D integrated circuits and system-in-package designs is creating major challenges for fault detection, yield optimisation, and process understanding. Existing inspection and failure-analysis methods often cannot provide the…
20. May 2026 11:40 – 12:00 Advanced Failure Analyse Techniques Ultra-Thin Ga-Free Lamella Preparation Enabling Pristine Structural-Chemical Analysis of Advanced Technology Nodes Letian Li ThermoFisher Scientific I The Netherlands Abstract Ultra-thin, precisely targeted lamella preparation on advanced IC devices has traditionally been considered a Ga-FIB application. However, recent advances in semiconductor processing now require gallium-free…
20. May 2026 10:40 – 11:00 Advanced Failure Analyse Techniques Localization of Package Defects in Semiconductor Devices by EOTPR Markus Pfeiffer Robert Bosch GmbH I Germany Abstract This presentation introduces Electro-Optic Terahertz Pulse Reflectometry (EOTPR) as a non-destructive method for the localization of electrical opens and shorts within semiconductor device packages. EOTPR operates by generating…
20. May 2026 11:00 – 11:20 Advanced Failure Analyse Techniques Ultra-Low pA-level Noise EBIC and RCI of High Impedance Samples René Hammer point electronic I Germany Abstract Nanoprobing imaging equipment for Electron Beam Absorbed Current/Resistive Contrast Imaging (EBAC/RCI) and Electron Beam Induced Current (EBIC) techniques is widely used in the semiconductor industry for process control…