20. May 2025 11:20 – 11:40 MEMS & Sensors Micromechanics without walking the plank- MEMS characterization at Infineon Regensburg Holger Pfaff Infineon Technologies I Germany Abstract MEMS have revolutionized sensor applications over the past three decades, ranging from smart environmental monitoring in phones (pressure, acceleration, voice recognition) to life-saving technologies (airbags, health monitoring). The fundamental…
20. May 2025 14:00 – 14:20 Emerging Fault Isolation Techniques Exploring the Capabilities and Applications of E-beam probing for Failure Analysis Neel Leslie Thermofisher Scientific I USA Abstract Electron beam probing has emerged as an emerging technique in the field of failure analysis, offering unparalleled insights into probing capabilities and characterization of semiconductor devices. This…
21. May 2025 15:00 – 15:20 AI Applications and FA Workflows Speeding up FA workflows by AI – first results from the FA2IR project Bernhard Fichtl Carl Zeiss Microscopy GmbH I Germany Abstract Arivis Cloud is a web platform that enables failure analysts & other customers to leverage the power of Deep Learning without any…
21. May 2025 11:40 – 12:00 GaN Electronics Reliability characterization challenges for wide bandgap power electronics Daniel Wetzel X-Fab I Germany Abstract In today’s rapidly evolving semiconductor landscape, the adoption of wide-bandgap materials, advanced silicon (Si), and Micro-Electro-Mechanical Systems (MEMS) technologies is expanding the range of high-power applications. Wide-bandgap semiconductors such as Gallium Nitride (GaN)…
21. May 2025 14:40 – 15:00 AI Applications and FA Workflows Leveraging Machine Signals for Device-Level Quality Detection and Automatic Root Cause Analysis in Semiconductor Wire Bonding Kenneth J. Braakman NXP Semiconductors I The Netherlands Abstract This presentation focuses on leveraging machine signal data from wire bond machines by building data-driven solutions to enhance root…
21. May 2025 16:20 – 16:40 AI Applications and FA Workflows Failure Analysis Ontology for structuring FA knowledge and meta data in a machine and human readable format Christoph Maier Infineon Technologies AG I Germany Abstract Failure Analysis (FA) is critical for fast time-to-market and semiconductor reliability, yet structuring FA knowledge to align with FAIR…
21. May 2025 10:20 – 10:40 GaN Electronics Cascode GaN devices for high power application Victor Sizov Nexperia I Germany Abstract III-nitrides has been gaining increased attention in the power electronics industry due to its advantageous chemical, mechanical and electrical properties marking an obvious successor in many power management applications. Based on wide band gap…
20. May 2025 14:40 – 15:00 Emerging Fault Isolation Techniques Challenges for Nanoprobing of 22nm FDSOI devices Pascal Limbecker GlobalFoundries Dresden Module One LLC & Co. KG I Germany Abstract Globalfoundries’ 22nm FDSOI (22FDX®) technology offers full SoC integration including digital, analog and RF. It combines high performance and ultra-low power. With body-biasing it is…
20. May 2025 15:40 – 16:00 Emerging Fault Isolation Techniques RF-LIT background and use cases Marc van Veenhuizen NXP I The Netherlands Abstract Lockin Thermography is a great failure analysis technique to investigate shorts or in general resistive connections. By applying an RF-stimulus, it will be shown in this presentation that the technique can be…
21. May 2025 11:20 – 11:40 GaN Electronics Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates Michél Simon-Najasek Fraunhofer IMWS I Germany Abstract The clear correlation of defect localization by Electroluminescence to nanometer sized defects at Schottky gate contacts of GaN HEMTs are always challenging…